N.A.TURGUNOV; E.KH.BERKINOV; R.M.TURMANOVA. INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI. American Journal of Applied Science and Technology, [S. l.], v. 3, n. 03, p. 53–57, 2023. DOI: 10.37547/ajast/Volume03Issue03-10. Disponível em: https://www.theusajournals.com/index.php/ajast/article/view/954. Acesso em: 1 nov. 2025.