I.G.TURSUNOV; M.A.RAKHMANOV. EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON. American Journal of Applied Science and Technology, [S. l.], v. 4, n. 11, p. 14–21, 2024. DOI: 10.37547/ajast/Volume04Issue11-03. Disponível em: https://www.theusajournals.com/index.php/ajast/article/view/3890. Acesso em: 31 oct. 2025.